Cheon Lab

NiS and PdS thin films are prepared at 10-2 Torr from the single-source precursors M(S2COCHMe2)2, M = Ni and Pd. Two different vapor deposition processes, photochemical and thermal, are employed. Gas-phase emission spectroscopy is used during the photochemical deposition to identify the two elemental components of the final materials, the metal atom and sulfur, in the gas phase. NiS and PdS thin films are grown by the thermal process at 300 and 350 °C, respectively, on Si and quartz substrates. The NiS films are highly oriented rhombohedral (γ) phase, and the PdS films are tetragonal-phase polycrystalline. The metal sulfide films are grown photolytically by 308 nm laser irradiation of the gas-phase precursors at lower temperatures (near the sublimation temperature). The NiS films show no X-ray diffraction patterns, but the PdS films are polycrystalline tetragonal phase. The films are analyzed by various surface analytical tools including scanning electron microscopy, X-ray photoelectro

The wide band gap II/VI semiconductors are of current interest for optoelectronic applications such as blue lasers, light-emitting diodes, and optical devices based on nonlinear properties.1,2In particular, ternary phase materials (e.g., ZnxCd1-xS) have attracted technological interest because the band gap can be tuned and the lattice parameters can be varied. Chemical vapor deposition (CVD) of II/VI materials from pyrolysis of metal complexes with sulfur-chelating ligands (dithiocarbamate, dithiophosphate) has been reported,3 but photoassisted CVD is rare.

ZnS thin films are made by laser driven chemical vapor deposition (CVD) from a single-source precursor, Zn(S2COCHMe2)2 under vacuum conditions. Photofragments in the gas phase are identified simultaneously by luminescence spectroscopy. The laser selectively activates the initial decomposition of the precursor and drives its conversion to the desired materials under mild conditions. These photolytically produced films are compared to films made by thermal deposition from the same precursor. The deposits from both techniques, characterized by X-ray diffraction, Rutherford backscattering, and X-ray photoelectron spectroscopy, are pure stoichiometric ZnS in the hexagonal phase. Surface morphology differs in shape and granule size. During the laser-driven CVD process, gas-phase photochemical intermediates are identified by luminescence spectroscopy. The luminescent photoproducts are Zn and S2, the two elemental components of the final material. Photofragmentation mechanisms leading to ZnS,

Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In [SeC (SiMe3) s] 3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).

The organometallic compounds bis(allyl)zinc and bis(2-methylallyl)zinc have been shown to serve as MOCVD precursors for the deposition of zinc at temperatures as low as 150 °C. The deposits on Si(100) wafers, quartz, copper, and aluminum consist of aggregates of hexagonal plates and columns. On silicon(100) substrates and at low background pressures (10−4 Torr), the zinc crystals are oriented preferentially with their c axes perpendicular to the silicon surface. The organic byproducts generated under CVD conditions are 1,5- hexadiene (76 mol %), 2-methyl-1,4-pentadiene (14 mol %), and propene (10 mol %); except for the pentadiene product, analogous hydrocarbons in similar amounts are formed when bis(2-methylallyl)zinc is used as the precursor. In situ spectroscopic studies on single-crystal Cud (111) substrates show that bis(allyl)zinc transfers its allyl groups to the surface below 250 °C; the surface-bound allyl groups are probably bound in a trihapto fashion. On clean surfaces, the

Synthesis of dichloro cobalt (Ⅲ) complexes of a flexible N2O2-type tetradentate ligand, ethylenediamene-N, N'-di- -isobutyric acid (eddib), has yielded two geometrical isomers, s-cis-(Co (eddib) Cl2)-and uns-cis-(Co (eddib) Cl2)-. A series of substitution reactions, (Co (eddib) Cl2)- →(CO (eddib) Cl H2O)→(Co (eddib) CO_3)-→(Co (eddib (H2O)2)+ have been run for each of the two geometrical isomers. The reaction between the s-cis-(Co (eddib) Cl2)- complex and L-alanine (L-als) or S-methyl-L-cysteine (L-mcy) gave the meridional s-cis-[Co (eddib)(aa))(aa= L-ala or L-mcy) complex. The S-methyl-L-cysteine was found to coordinate to cobalt (Ⅲ) ion via the nitrogen and oxygen donor atoms.

A new optically active ONNO-type tetradentate ligand, ethylenediamine-N,N′- di-S-isobutylacetate (SS-eniba), has been synthesized. During the preparation of diaqua cobalt(III) complexes of SS-eniba, [Co(SS-eniba)(H2O)2]+, the title ligand has coordinated stereospecifically to the cobalt(III) ion to give three isomers, Δ-s-cis, Δ-uns-cis and Λ-uns-cis, which have been isolated and characterized via electronic absorption, circular dichroism (CD), and 1H NMR spectroscopy, along with elemental analysis data. The preparation of Δ-s-cis-[Co(SS-eniba)Cl2]+ and Δ-s-cis-[Co(SS-eniba)CO3]+ are also reported.