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Jinwoo Cheon and Jeffrey I. Zink*
Gas Phase Photochemical Synthesis of II/VI Metal Sulfide Films and in Situ Luminescence Spectroscopic Identification of Photofragments
J. Am. Chem. Soc., 119(16), 3838–3839
Gas Phase Photochemical Synthesis of II/VI Metal Sulfide Films and in Situ Luminescence Spectroscopic Identification of Photofragments
J. Am. Chem. Soc., 119(16), 3838–3839
Date: Apr 1, 1997
The wide band gap II/VI semiconductors are of current interest for optoelectronic applications such as blue lasers, light-emitting diodes, and optical devices based on nonlinear properties.1,2In particular, ternary phase materials (e.g., ZnxCd1-xS) have attracted technological interest because the band gap can be tuned and the lattice parameters can be varied. Chemical vapor deposition (CVD) of II/VI materials from pyrolysis of metal complexes with sulfur-chelating ligands (dithiocarbamate, dithiophosphate) has been reported,3 but photoassisted CVD is rare.
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